Correction to: Realizing Room-Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl 2 O 4 Quasi-Quantum Well Structures (Advanced Science, (2019), 6, 20, (1901438), 10.1002/advs.201901438)

Qingyi Xiang, Hiroaki Sukegawa, Mohamed Belmoubarik, Muftah Al-Mahdawi, Thomas Scheike, Shinya Kasai, Yoshio Miura, Seiji Mitani

Research output: Contribution to journalComment/debatepeer-review

2 Citations (Scopus)

Abstract

In the originally published article, the top layers of the thin films and patterned magnetic tunnel junctions (MTJs) in Figure 2 were incorrectly labeled as CoFeB. The correct Figure is presented here. The authors apologize for any misunderstanding this may have caused. (Figure presented.) a) Thin films and patterned MTJs of Cr/ultrathin Fe/MgAl2O4/Fe with ultrathin wedge Fe layer. b) Conductance and c) TMR maps on bias voltage Vbias and calibrated Fe layer numbers nFe for patterned MTJs at RT. The resonant peak positions are marked with black points.

Original languageEnglish
Article number1902995
JournalAdvanced Science
Volume6
Issue number22
DOIs
Publication statusPublished - 2019 Nov 1

ASJC Scopus subject areas

  • Medicine (miscellaneous)
  • Chemical Engineering(all)
  • Biochemistry, Genetics and Molecular Biology (miscellaneous)
  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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