Correction: Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability (IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (2013) 32:7 (1045-1058) DOI: 10.1109/TCAD.2013.2248194)

Chuan Xu, Seshadri K. Kolluri, Kazhuhiko Endo, Kaustav Banerjee

Research output: Contribution to journalComment/debatepeer-review

Abstract

In our paper [1], there was an error in (50), which is rewritten here as (Equation Presented) The correct expression should be (Equation Presented) where T0 is the reference constant temperature defined at the bottom of the buried oxide (BOX), and all other terms were defined in [1]. This error does not affect the results in [1, Fig. 21], as the actual source code does not contain the error. It is also worthwhile to note that, as stated in [1, Fig. 9], all equations in [1] were derived with the assumption of the following boundary conditions: constant temperature of T0 at the bottom of the BOX and adiabatic boundary condition (or symmetry boundary condition) at the four sidewalls and the top. For transient analysis, temperature of T0 was assumed to be everywhere at time zero. Acknowledgment: The authors would like to thank Z. Kang from Shanghai Jiao Tong University for carefully reading and deriving through the paper.

Original languageEnglish
Article number8939318
Number of pages1
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume39
Issue number1
DOIs
Publication statusPublished - 2020 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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