TY - JOUR
T1 - Copper iodide semiconductor
T2 - a non-hygroscopic, bright red-emitting scintillator for X-ray and gamma-ray detection
AU - Fujimoto, Yutaka
AU - Asai, Keisuke
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research (B) (No. 21H01853, 2021–2024) and (A) (No. 22H00308, 2022–2026) funded by the Japan Society for the Promotion of Science and Iketani Science and Technology Foundation 2022 research support. This work also formed a part of the Cooperative Research Project of the Research Center for Biomedical Engineering, Ministry of Education, Culture, Sports, Science, and Technology.
Publisher Copyright:
© 2022 The Japan Society of Applied Physics.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - In this work, the inverse temperature crystallization and scintillation properties of copper iodide (CuI) semiconductors are presented. Single crystal of a γ-CuI is very attractive for X- and gamma-ray detection applications due to its non-hygroscopic and excellent light yield with long-wavelength emission in the red. The grown crystal shows an almost colorless and transparent feature and exhibits a red emission band peaking at 730 nm with a fluorescence quantum efficiency (QE) of 43% under excitation at 416 nm. The photoluminescence (PL) decay time constant was estimated to be approximately 175 ns (20%) and 2507 ns (80%) using an exponential fitting. The X-ray excited scintillation band appeared near the wavelength of 720 nm. The scintillation light yield reached 80000 photons MeV-1 compared with a CsI:Tl commercial scintillator.
AB - In this work, the inverse temperature crystallization and scintillation properties of copper iodide (CuI) semiconductors are presented. Single crystal of a γ-CuI is very attractive for X- and gamma-ray detection applications due to its non-hygroscopic and excellent light yield with long-wavelength emission in the red. The grown crystal shows an almost colorless and transparent feature and exhibits a red emission band peaking at 730 nm with a fluorescence quantum efficiency (QE) of 43% under excitation at 416 nm. The photoluminescence (PL) decay time constant was estimated to be approximately 175 ns (20%) and 2507 ns (80%) using an exponential fitting. The X-ray excited scintillation band appeared near the wavelength of 720 nm. The scintillation light yield reached 80000 photons MeV-1 compared with a CsI:Tl commercial scintillator.
KW - inverse temperature crystallization
KW - scintillator
KW - semiconductor
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U2 - 10.35848/1347-4065/ac9348
DO - 10.35848/1347-4065/ac9348
M3 - Article
AN - SCOPUS:85143143978
SN - 0021-4922
VL - 62
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 1
M1 - 010605
ER -