Cooperative promotion of plasma instabilities for emission of terahertz radiation in an asymmetric dual-grating-gate graphene-channel FET

Akira Satou, Yuki Koseki, Takayuki Watanabe, Vyacheslav V. Popov, Victor Ryzhii, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With ultimately high-quality graphene where the electron scattering is only limited by acoustic phonons, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed 4 X 1012 s-1 at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. We show that the giant total growth rate originates from cooperative promotion of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.

Original languageEnglish
Title of host publicationTerahertz Physics, Devices, and Systems X
Subtitle of host publicationAdvanced Applications in Industry and Defense
EditorsMehdi F. Anwar, Thomas W. Crowe, Tariq Manzur
PublisherSPIE
ISBN (Electronic)9781510600973
DOIs
Publication statusPublished - 2016
EventTerahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense - Baltimore, United States
Duration: 2016 Apr 172016 Apr 19

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9856
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherTerahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense
CountryUnited States
CityBaltimore
Period16/4/1716/4/19

Keywords

  • Plasmon
  • THz emission
  • graphene
  • instability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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