Lattice strain distribution was measured in Si substrates near NiSi2 islands. Using the convergent beam electron diffraction (CBED) technique, quantitative and highly spatially resolved evaluations were carried out. Variations in the CBED patterns were found to be due to a combination of stress components with different orientations and magnitude. As a result, it was revealed that, in addition to normal stress components, singular stress with characteristic orientation or extremely high strain concentration was observed, especially near the NiSi2 island corner. This actual strain distribution was considered to be highly influenced by the shape, size and orientation of the NiSi2 island on Si substrates.
|Number of pages||7|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 1997 Aug|
- NiSi island
- Strain distribution
ASJC Scopus subject areas
- Physics and Astronomy(all)