Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC(111)/Si

Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, Maki Suemitsu

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34 Citations (Scopus)

Abstract

Epitaxial graphene on Si (GOS) using a heteroepitaxy of 3C-SiC/Si has attracted recent attention owing to its capability to fuse graphene with Sibased electronics. We demonstrate that the stacking, interface structure, and hence, electronic properties of GOS can be controlled by tuning the surface termination of 3C-SiC(111)/Si, with a proper choice of Si substrate and SiC growth conditions. On the Si-terminated 3C-SiC(111)/Si(111) surface, GOS is Bernal-stacked with a band splitting, while on the C-terminated 3C-SiC(111)/Si(110) surface, GOS is turbostratically stacked without a band splitting. This work enables us to precisely control the electronic properties of GOS for forthcoming devices.

Original languageEnglish
Article number115104
JournalApplied Physics Express
Volume4
Issue number11
DOIs
Publication statusPublished - 2011 Nov 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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