Controlling the solid-phase nucleation of amorphous si by means of a substrate step structure and local phosphorus doping

Masahiro Moniwa, Kikuo Kusukawa, Makoto Ohkura, Eiji Takeda

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

We propose a solid-phase crystallization technique that controls the location of crystal grain formation on SiO2substrates. This enables the formation of electronic devices in a single grain. To determine the condition of the technique, the nucleation characteristics of amorphous Si with P- and B-doping are investigated. Also, the characteristics with and without step structures on the substrate surface are reported and discussed. The various nucleation behaviors can be interpreted in terms of the critical size of the nucleus and of the rate of crystal growth.

Original languageEnglish
Pages (from-to)312-317
Number of pages6
JournalJapanese journal of applied physics
Volume32
Issue number1 S
DOIs
Publication statusPublished - 1993 Jan
Externally publishedYes

Keywords

  • Amorphous
  • Critical size
  • Doping
  • Growth
  • Nucleation
  • Polycrystalline
  • Si
  • Solid phase
  • Step
  • Stress

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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