Controlling the solid-phase nucleation of amorphous si by means of a substrate step structure and local phosphorus doping

Masahiro Moniwa, Kikuo Kusukawa, Makoto Ohkura, Eiji Takeda

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    We propose a solid-phase crystallization technique that controls the location of crystal grain formation on SiO2substrates. This enables the formation of electronic devices in a single grain. To determine the condition of the technique, the nucleation characteristics of amorphous Si with P- and B-doping are investigated. Also, the characteristics with and without step structures on the substrate surface are reported and discussed. The various nucleation behaviors can be interpreted in terms of the critical size of the nucleus and of the rate of crystal growth.

    Original languageEnglish
    Pages (from-to)312-317
    Number of pages6
    JournalJapanese journal of applied physics
    Volume32
    Issue number1 S
    DOIs
    Publication statusPublished - 1993 Jan

    Keywords

    • Amorphous
    • Critical size
    • Doping
    • Growth
    • Nucleation
    • Polycrystalline
    • Si
    • Solid phase
    • Step
    • Stress

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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