Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3 d transition-metal doping

S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, A. Uedono

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Carrier lifetime in nearly threading-dislocation-free ZnO homoepitaxial films was controlled by doping 3d transition-metals (TMs), Ni and Mn. The photoluminescence lifetime of the near-band-edge emission (τPL) was decreased linearly by increasing TM concentration, indicating that such TMs are predominant nonradiative recombination centers (NRCs). From this relationship, exciton capture-cross-section (σex) of 2.4 × 10-15 cm2 is obtained. Because σex of native-NRCs (Zn-vacancy complexes) is likely larger than this value, the linear dependence of the internal quantum efficiency on τPL observed in our TM-doped ZnO and unintentionally doped ZnO in literatures indicates that the concentrations of native-NRCs in the latter are "lower than" 1016-1017cm-3.

Original languageEnglish
Article number021904
JournalApplied Physics Letters
Volume108
Issue number2
DOIs
Publication statusPublished - 2016 Jan 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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