Abstract
By combining state-of-the-art microscopy, spectrosccopy, and first-principles calculations, atomic-scale intermixing behavior at heterointerfaces in SrTiO3-based superlattices is investigated. It is found that Nb is confined to a unit-cell thickness without intermixing, whereas Ba diffuses only to the adjoining Nb-doped SrTiO3 layer. It is revealed that the intermixing behaviors at the heterointerfaces are determined by not only the migration energy, but also by the vacancy-formation energy and the Fermi energy of each layer. Based on these results, we find a method to control the atomic-scale intermixing at the nonpolar heterointerfaces and clearly demonstrate the property improvements obtained by constructing an abrupt heterointerface.
Original language | English |
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Pages (from-to) | 2258-2263 |
Number of pages | 6 |
Journal | Advanced Functional Materials |
Volume | 21 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2011 Jun 21 |
Keywords
- electronic structures/ processes/mechanisms
- nanostructures
- structure-property relationships
- thin films
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics