Controlling fluorine concentration of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Control of the fluorine to carbon (F/C) ratio of fluorinated amorphous carbon (a-C:F) thin films by changing the deposition pressure is investigated. Decreasing the deposition pressure increases the dissociation of the source fluorocarbon material in the plasma, causing a decrease in the F/C ratio of the deposited film. There is a tradeoff relationship between the dielectric constant and the thermal stability. Both the thermal stability and the dielectric constant of the a-C:F films are increased as the F/C ratio is decreased. Thus, the tradeoff relationship between them can be optimized by the pressure during deposition.

Original languageEnglish
Pages (from-to)L1531-L1533
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number11 SUPPL. B
DOIs
Publication statusPublished - 1997 Nov 15
Externally publishedYes

Keywords

  • Amorphous carbon
  • Interlayer dielectrics
  • Low-dielectric-constant
  • Plasma-enhanced chemical-vapor-deposition

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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