Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

Takeaki Yajima, Yasuyuki Hikita, Makoto Minohara, Christopher Bell, Julia A. Mundy, Lena F. Kourkoutis, David A. Muller, Hiroshi Kumigashira, Masaharu Oshima, Harold Y. Hwang

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The concept 'the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.

Original languageEnglish
Article number6759
JournalNature communications
Volume6
DOIs
Publication statusPublished - 2015 Apr 13

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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    Yajima, T., Hikita, Y., Minohara, M., Bell, C., Mundy, J. A., Kourkoutis, L. F., Muller, D. A., Kumigashira, H., Oshima, M., & Hwang, H. Y. (2015). Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces. Nature communications, 6, [6759]. https://doi.org/10.1038/ncomms7759