The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO2-based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO2/TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO2 devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance.
ASJC Scopus subject areas
- Physics and Astronomy(all)