Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer

Sridhar Chandrasekaran, Firman Mangasa Simanjuntak, Tseung Yuen Tseng

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO2-based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO2/TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO2 devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance.

Original languageEnglish
Article number04FE10
JournalJapanese journal of applied physics
Volume57
Issue number4
DOIs
Publication statusPublished - 2018 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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