Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films

Seungjun Oh; Tadashi Morita; Tomoki Ikeda; Masakiyo Tsunoda; Mikihiko Ogane; Yasuo Ando

doi:10.1063/1.5079688

Controlled growth and magnetic property of a-plane-oriented Mn₃Sn thin films

Seungjun Oh, Tadashi Morita, Tomoki Ikeda, Masakiyo Tsunoda, Mikihiko Ogane, Yasuo Ando

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Highly a-plane-oriented Mn₃Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn_3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The crystallographic orientations of Mn₃Sn domains are found to be sensitively influenced by substrate temperature, thickness and composition ratio of Mn_3+αSn buffer layer. The highly a-plane-oriented Mn₃Sn film shows slightly different magnetization behavior from randomly oriented Mn₃Sn film, while the saturation magnetization Ms and coercivity of the highly a-plane-oriented Mn₃Sn film are corresponding to that of single crystal bulk.

Original language	English
Article number	035109
Journal	AIP Advances
Volume	9
Issue number	3
DOIs	https://doi.org/10.1063/1.5079688
Publication status	Published - 2019 Mar 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Highly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The crystallographic orientations of Mn3Sn domains are found to be sensitively influenced by substrate temperature, thickness and composition ratio of Mn3+αSn buffer layer. The highly a-plane-oriented Mn3Sn film shows slightly different magnetization behavior from randomly oriented Mn3Sn film, while the saturation magnetization Ms and coercivity of the highly a-plane-oriented Mn3Sn film are corresponding to that of single crystal bulk.",

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T1 - Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films

AU - Oh, Seungjun

AU - Morita, Tadashi

AU - Ikeda, Tomoki

AU - Tsunoda, Masakiyo

AU - Ogane, Mikihiko

AU - Ando, Yasuo

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Highly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The crystallographic orientations of Mn3Sn domains are found to be sensitively influenced by substrate temperature, thickness and composition ratio of Mn3+αSn buffer layer. The highly a-plane-oriented Mn3Sn film shows slightly different magnetization behavior from randomly oriented Mn3Sn film, while the saturation magnetization Ms and coercivity of the highly a-plane-oriented Mn3Sn film are corresponding to that of single crystal bulk.

AB - Highly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The crystallographic orientations of Mn3Sn domains are found to be sensitively influenced by substrate temperature, thickness and composition ratio of Mn3+αSn buffer layer. The highly a-plane-oriented Mn3Sn film shows slightly different magnetization behavior from randomly oriented Mn3Sn film, while the saturation magnetization Ms and coercivity of the highly a-plane-oriented Mn3Sn film are corresponding to that of single crystal bulk.

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Controlled growth and magnetic property of a-plane-oriented Mn₃Sn thin films

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