Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuum

Tomoaki Hatayama, Yoichiro Tarui, Tastuo Yoshinobu, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Carbonization of a Si(001) surface by hydrocarbon radicals is obtained in an ultrahigh vacuum at 750°C. Hydrocarbon gases such as C3H8, C2H6 and CH4 are decomposed by thermal cracking, and generated radical species are investigated by quadrupole mass analysis. The thickness of carbonized layer is controlled easily by cracking temperature and exposure time, and very smooth surfaces are obtained. The differences in the cases of various hydrocarbon sources are discussed in detail.

Original languageEnglish
Pages (from-to)333-337
Number of pages5
JournalJournal of Crystal Growth
Volume136
Issue number1-4
DOIs
Publication statusPublished - 1994 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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