Controllable remanent states on microstructured magnetic tunnel junction rings

C. C. Chen; C. T. Chao; C. Y. Kuo; Lance Horng; Teho Wu; G. Chern; C. Y. Huang; S. Isogami; M. Tsunoda; Migaku Takahashi; J. C. Wu

doi:10.1109/TMAG.2007.894206

Controllable remanent states on microstructured magnetic tunnel junction rings

C. C. Chen, C. T. Chao, C. Y. Kuo, Lance Horng, Teho Wu, G. Chern, C. Y. Huang, S. Isogami, M. Tsunoda, Migaku Takahashi, J. C. Wu

ENG - Electronic Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

Original language	English
Pages (from-to)	2824-2826
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	43
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2007.894206
Publication status	Published - 2007 Jun 1

Keywords

Magnetic tunneling junction (MTJ)
Magnetoresistance
Multibit application
Ring-shaped cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2007.894206

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Chen, C. C., Chao, C. T., Kuo, C. Y., Horng, L., Wu, T., Chern, G., Huang, C. Y., Isogami, S., Tsunoda, M., Takahashi, M., & Wu, J. C. (2007). Controllable remanent states on microstructured magnetic tunnel junction rings. IEEE Transactions on Magnetics, 43(6), 2824-2826. https://doi.org/10.1109/TMAG.2007.894206

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title = "Controllable remanent states on microstructured magnetic tunnel junction rings",

abstract = "Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.",

keywords = "Magnetic tunneling junction (MTJ), Magnetoresistance, Multibit application, Ring-shaped cells",

author = "Chen, {C. C.} and Chao, {C. T.} and Kuo, {C. Y.} and Lance Horng and Teho Wu and G. Chern and Huang, {C. Y.} and S. Isogami and M. Tsunoda and Migaku Takahashi and Wu, {J. C.}",

year = "2007",

month = jun,

day = "1",

doi = "10.1109/TMAG.2007.894206",

language = "English",

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journal = "IEEE Transactions on Magnetics",

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T1 - Controllable remanent states on microstructured magnetic tunnel junction rings

AU - Chen, C. C.

AU - Chao, C. T.

AU - Kuo, C. Y.

AU - Horng, Lance

AU - Wu, Teho

AU - Chern, G.

AU - Huang, C. Y.

AU - Isogami, S.

AU - Tsunoda, M.

AU - Takahashi, Migaku

AU - Wu, J. C.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

AB - Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

KW - Magnetic tunneling junction (MTJ)

KW - Magnetoresistance

KW - Multibit application

KW - Ring-shaped cells

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