Controllable remanent states on microstructured magnetic tunnel junction rings

C. C. Chen, C. T. Chao, C. Y. Kuo, Lance Horng, Teho Wu, G. Chern, C. Y. Huang, S. Isogami, M. Tsunoda, Migaku Takahashi, J. C. Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements. These rings were designed accordingly with an outer/inner diameter of 2/1 and 1/0.5/μm to reveal two and one metastable states, respectively, during the magnetization reversal process on the free layer. The distinct magnetoresistance levels based on the tunneling magnetoresistance effect are associated with the relative alignment of magnetization of free layer and pinned layer. As a result, four and three controllable remanent magnetic states on the free layer were manipulated by ramping external magnetic fields, applied in the biasing direction, with various field ranges, giving rise to four and three stable mangetoresistance values at zero field. These results may provide a great potential in magnetic multibit memory applications using ring-shaped cells.

Original languageEnglish
Pages (from-to)2824-2826
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1

Keywords

  • Magnetic tunneling junction (MTJ)
  • Magnetoresistance
  • Multibit application
  • Ring-shaped cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chen, C. C., Chao, C. T., Kuo, C. Y., Horng, L., Wu, T., Chern, G., Huang, C. Y., Isogami, S., Tsunoda, M., Takahashi, M., & Wu, J. C. (2007). Controllable remanent states on microstructured magnetic tunnel junction rings. IEEE Transactions on Magnetics, 43(6), 2824-2826. https://doi.org/10.1109/TMAG.2007.894206