Controllable growth of C60 thin films Bi(001)/Si(111) surface

R. Z. Bakhtizin; A. I. Oreshkin; J. T. Sadowski; Y. Fujikawa; T. Sakurai

doi:10.1080/15363830802281856

Controllable growth of C₆₀ thin films Bi(001)/Si(111) surface

R. Z. Bakhtizin, A. I. Oreshkin, J. T. Sadowski, Y. Fujikawa, T. Sakurai

Research output: Contribution to journal › Article › peer-review

Abstract

Surface morphology and controllable growth of C₆₀ films on a semi-metallic Bi(001)/Si(111) template surface were studied under ultra-high vacuum conditions using scanning tunneling microscopy. Submonolayer, monolayer and thick layer coverage were imaged with atomic resolution. It is shown that the most favorable sites for C₆₀ nucleation are domain boundaries and double steps whereas the surface with one monolayer coverage revealed a characteristic modulation pattern coming from the epitaxial relation between C₆₀ and Bi unit cells.

Original language	English
Pages (from-to)	417-423
Number of pages	7
Journal	Fullerenes Nanotubes and Carbon Nanostructures
Volume	16
Issue number	5-6
DOIs	https://doi.org/10.1080/15363830802281856
Publication status	Published - 2008 Sep

Keywords

Fullerene C
Scanning tunneling microscopy
Thin film growth

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Physical and Theoretical Chemistry
Organic Chemistry

Access to Document

10.1080/15363830802281856

Cite this

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title = "Controllable growth of C60 thin films Bi(001)/Si(111) surface",

abstract = "Surface morphology and controllable growth of C60 films on a semi-metallic Bi(001)/Si(111) template surface were studied under ultra-high vacuum conditions using scanning tunneling microscopy. Submonolayer, monolayer and thick layer coverage were imaged with atomic resolution. It is shown that the most favorable sites for C60 nucleation are domain boundaries and double steps whereas the surface with one monolayer coverage revealed a characteristic modulation pattern coming from the epitaxial relation between C60 and Bi unit cells.",

keywords = "Fullerene C, Scanning tunneling microscopy, Thin film growth",

author = "Bakhtizin, {R. Z.} and Oreshkin, {A. I.} and Sadowski, {J. T.} and Y. Fujikawa and T. Sakurai",

note = "Funding Information: This work was supported in part by the Russian Foundation for Basic Research Grant No. 08-02-00658.",

year = "2008",

month = sep,

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T1 - Controllable growth of C60 thin films Bi(001)/Si(111) surface

AU - Bakhtizin, R. Z.

AU - Oreshkin, A. I.

AU - Sadowski, J. T.

AU - Fujikawa, Y.

AU - Sakurai, T.

N1 - Funding Information: This work was supported in part by the Russian Foundation for Basic Research Grant No. 08-02-00658.

PY - 2008/9

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N2 - Surface morphology and controllable growth of C60 films on a semi-metallic Bi(001)/Si(111) template surface were studied under ultra-high vacuum conditions using scanning tunneling microscopy. Submonolayer, monolayer and thick layer coverage were imaged with atomic resolution. It is shown that the most favorable sites for C60 nucleation are domain boundaries and double steps whereas the surface with one monolayer coverage revealed a characteristic modulation pattern coming from the epitaxial relation between C60 and Bi unit cells.

AB - Surface morphology and controllable growth of C60 films on a semi-metallic Bi(001)/Si(111) template surface were studied under ultra-high vacuum conditions using scanning tunneling microscopy. Submonolayer, monolayer and thick layer coverage were imaged with atomic resolution. It is shown that the most favorable sites for C60 nucleation are domain boundaries and double steps whereas the surface with one monolayer coverage revealed a characteristic modulation pattern coming from the epitaxial relation between C60 and Bi unit cells.

KW - Fullerene C

KW - Scanning tunneling microscopy

KW - Thin film growth

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