Controllable growth of C60 thin films Bi(001)/Si(111) surface

R. Z. Bakhtizin; A. I. Oreshkin; J. T. Sadowski; Y. Fujikawa; Toshio Sakurai

doi:10.1080/15363830802281856

Controllable growth of C₆₀ thin films Bi(001)/Si(111) surface

R. Z. Bakhtizin, A. I. Oreshkin, J. T. Sadowski, Y. Fujikawa, Toshio Sakurai

Research output: Contribution to journal › Article

Abstract

Surface morphology and controllable growth of C₆₀ films on a semi-metallic Bi(001)/Si(111) template surface were studied under ultra-high vacuum conditions using scanning tunneling microscopy. Submonolayer, monolayer and thick layer coverage were imaged with atomic resolution. It is shown that the most favorable sites for C₆₀ nucleation are domain boundaries and double steps whereas the surface with one monolayer coverage revealed a characteristic modulation pattern coming from the epitaxial relation between C₆₀ and Bi unit cells.

Original language	English
Pages (from-to)	417-423
Number of pages	7
Journal	Fullerenes Nanotubes and Carbon Nanostructures
Volume	16
Issue number	5-6
DOIs	https://doi.org/10.1080/15363830802281856
Publication status	Published - 2008 Sep 1

Keywords

Fullerene C
Scanning tunneling microscopy
Thin film growth

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Physical and Theoretical Chemistry
Organic Chemistry

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Bakhtizin, R. Z., Oreshkin, A. I., Sadowski, J. T., Fujikawa, Y., & Sakurai, T. (2008). Controllable growth of C₆₀ thin films Bi(001)/Si(111) surface. Fullerenes Nanotubes and Carbon Nanostructures, 16(5-6), 417-423. https://doi.org/10.1080/15363830802281856

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AU - Fujikawa, Y.

AU - Sakurai, Toshio

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