TY - JOUR
T1 - Controllable gallium melt-assisted interfacial graphene growth on silicon carbide
AU - Lee, Michael V.
AU - Hiura, Hidefumi
AU - Tyurnina, Anastasia V.
AU - Tsukagoshi, Kazuhito
N1 - Funding Information:
The authors acknowledge support by the World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics (MANA), MEXT, Japan . This work was supported in part by KAKENHI (No. 21241038 ) from MEXT, Japan and by the FIRST Program from the JSPS .
PY - 2012/4
Y1 - 2012/4
N2 - Liquid gallium on the silicon carbide (SiC) surface forms graphene directly on non-conductive SiC surfaces at lower temperatures than are required for SiC decomposition. The uniformity and reproducibility across large areas have been one challenge. In this paper we demonstrate controllable growth of graphene with uniform characterization across the film surface. We show that material from the reaction cell was incorporated into the graphene films, which would likely work for many different materials and dopants. But when no other component is added, controllable graphene films will form with reproducible characterization over the entire surface contacted by the gallium flux. Additional carbon dissolved in the gallium can be used to cause a uniform layer of graphite crystals form and adsorb on the outer layer of the graphene films. These different pathways for gallium melt-assisted interfacial graphene (MAIG) growth can be used to tailor the production of graphene.
AB - Liquid gallium on the silicon carbide (SiC) surface forms graphene directly on non-conductive SiC surfaces at lower temperatures than are required for SiC decomposition. The uniformity and reproducibility across large areas have been one challenge. In this paper we demonstrate controllable growth of graphene with uniform characterization across the film surface. We show that material from the reaction cell was incorporated into the graphene films, which would likely work for many different materials and dopants. But when no other component is added, controllable graphene films will form with reproducible characterization over the entire surface contacted by the gallium flux. Additional carbon dissolved in the gallium can be used to cause a uniform layer of graphite crystals form and adsorb on the outer layer of the graphene films. These different pathways for gallium melt-assisted interfacial graphene (MAIG) growth can be used to tailor the production of graphene.
KW - Gallium flux
KW - Graphene on insulator
KW - Liquid phase epitaxial growth
KW - Silicon carbide
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U2 - 10.1016/j.diamond.2011.10.003
DO - 10.1016/j.diamond.2011.10.003
M3 - Article
AN - SCOPUS:84858339509
VL - 24
SP - 34
EP - 38
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
ER -