Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Wei Ou-Yang, Nobuhiko Mitoma, Takio Kizu, Xu Gao, Meng Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

Original languageEnglish
Article number163503
JournalApplied Physics Letters
Volume105
Issue number16
DOIs
Publication statusPublished - 2014 Oct 20
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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