Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages376-379
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06/10/2306/10/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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