Control of VW and SK growth modes in Ge quantum dot formation on Si(100) via carbon mediation

Y. Itoh, T. Kawashima, K. Washio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Control and mechanism analysis of Ge quantum dot (QD) formation on Si(100) by using two carbon (C) mediated methods, c(4×4) surface reconstruction (SR) and solid-phase epitaxy (SPE), was demonstrated for the first time. Si surface was reconstructed via the formation of C-Si bonds in advance of Ge deposition in SR method, QDs grew in Volmer-Wever mode due to the preferential nucleation on uncarbonized Si surface. Ge QDs were formed by annealing an amorphous Ge/C/Si heterostructure in SPE method, QDs grew in Stranski-Krastanov mode due to the incorporation of C-Ge bonds. Investigations, in this work, clarified that both c(4×4) surface reconstruction and strain relief played important roles through the analyses of surface morphology and C binding states.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages694-696
Number of pages3
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Control of VW and SK growth modes in Ge quantum dot formation on Si(100) via carbon mediation'. Together they form a unique fingerprint.

Cite this