TY - GEN
T1 - Control of VW and SK growth modes in Ge quantum dot formation on Si(100) via carbon mediation
AU - Itoh, Y.
AU - Kawashima, T.
AU - Washio, K.
N1 - Funding Information:
This research was supported by Japan Society for the Promotion of Science (JSPS) KAKENHI (Project No. 15H03554), and a Grant for Program Research from Division for International Advanced Research and Education (DIARE), Tohoku University.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - Control and mechanism analysis of Ge quantum dot (QD) formation on Si(100) by using two carbon (C) mediated methods, c(4×4) surface reconstruction (SR) and solid-phase epitaxy (SPE), was demonstrated for the first time. Si surface was reconstructed via the formation of C-Si bonds in advance of Ge deposition in SR method, QDs grew in Volmer-Wever mode due to the preferential nucleation on uncarbonized Si surface. Ge QDs were formed by annealing an amorphous Ge/C/Si heterostructure in SPE method, QDs grew in Stranski-Krastanov mode due to the incorporation of C-Ge bonds. Investigations, in this work, clarified that both c(4×4) surface reconstruction and strain relief played important roles through the analyses of surface morphology and C binding states.
AB - Control and mechanism analysis of Ge quantum dot (QD) formation on Si(100) by using two carbon (C) mediated methods, c(4×4) surface reconstruction (SR) and solid-phase epitaxy (SPE), was demonstrated for the first time. Si surface was reconstructed via the formation of C-Si bonds in advance of Ge deposition in SR method, QDs grew in Volmer-Wever mode due to the preferential nucleation on uncarbonized Si surface. Ge QDs were formed by annealing an amorphous Ge/C/Si heterostructure in SPE method, QDs grew in Stranski-Krastanov mode due to the incorporation of C-Ge bonds. Investigations, in this work, clarified that both c(4×4) surface reconstruction and strain relief played important roles through the analyses of surface morphology and C binding states.
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U2 - 10.1109/NANO.2016.7751455
DO - 10.1109/NANO.2016.7751455
M3 - Conference contribution
AN - SCOPUS:85006868809
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 694
EP - 696
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -