Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy

Y. Ohno, T. Taishi, I. Yonenaga, S. Ichikawa, R. Hirai, S. Takeda

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Pseudomorphic ZnSe layers on GaAs(0 0 1) were grown by molecular beam epitaxy under the light illumination with photon energy of about 1.8 eV. In the layers, isolated Shockley-type stacking faults on (1 1 1), bordering not on the ZnSe/GaAs interface but on the ZnSe surface, as well as the well-known stacking fault pairs, were formed. The sum of the stacking fault areas was small in comparison with the layers grown by molecular beam epitaxy without light illumination.

Original languageEnglish
Pages (from-to)650-653
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - 2007 Dec 15

Keywords

  • Molecular beam epitaxy
  • Stacking faults
  • Transmission electron microscopy
  • ZnSe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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