Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

Noritaka Usami, Kentaro Kutsukake, Kazuo Nakajima, Sevak Amtablian, Alain Fave, Mustapha Lemiti

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Single crystalline Si with buried porous layers was utilized as a substrate for the epitaxy of 100-nm -thick Si0.73 Ge0.27. Raman spectroscopy revealed that the strain status in SiGe systematically changes according to the variation in the porosity of the substrate and that the strain relaxation in SiGe was found to proceed with increasing porosity. Furthermore, Si was found to be tensilely strained to reduce the compressive strain in SiGe. These results suggest that the appropriate design of the porosity and the thickness of the thin Si layer on the buried porous layer offers an alternative way to control strain status in SiGe.

Original languageEnglish
Article number031915
JournalApplied Physics Letters
Volume90
Issue number3
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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