Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

Noritaka Usami; Kentaro Kutsukake; Kazuo Nakajima; Sevak Amtablian; Alain Fave; Mustapha Lemiti

doi:10.1063/1.2433025

Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

Noritaka Usami, Kentaro Kutsukake, Kazuo Nakajima, Sevak Amtablian, Alain Fave, Mustapha Lemiti

Materials Design Division

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Single crystalline Si with buried porous layers was utilized as a substrate for the epitaxy of 100-nm -thick Si0.73 Ge0.27. Raman spectroscopy revealed that the strain status in SiGe systematically changes according to the variation in the porosity of the substrate and that the strain relaxation in SiGe was found to proceed with increasing porosity. Furthermore, Si was found to be tensilely strained to reduce the compressive strain in SiGe. These results suggest that the appropriate design of the porosity and the thickness of the thin Si layer on the buried porous layer offers an alternative way to control strain status in SiGe.

Original language	English
Article number	031915
Journal	Applied Physics Letters
Volume	90
Issue number	3
DOIs	https://doi.org/10.1063/1.2433025
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2433025

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title = "Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer",

abstract = "Single crystalline Si with buried porous layers was utilized as a substrate for the epitaxy of 100-nm -thick Si0.73 Ge0.27. Raman spectroscopy revealed that the strain status in SiGe systematically changes according to the variation in the porosity of the substrate and that the strain relaxation in SiGe was found to proceed with increasing porosity. Furthermore, Si was found to be tensilely strained to reduce the compressive strain in SiGe. These results suggest that the appropriate design of the porosity and the thickness of the thin Si layer on the buried porous layer offers an alternative way to control strain status in SiGe.",

author = "Noritaka Usami and Kentaro Kutsukake and Kazuo Nakajima and Sevak Amtablian and Alain Fave and Mustapha Lemiti",

note = "Funding Information: This work was supported by the Japan-France integrated action program, “SAKURA,” from the Japan Society for the Promotion of Science (JSPS), the Minist{\`e}re des Affaires Etrang{\`e}res in France (MAE), and the Minist{\`e}re de l{\textquoteright}Education Nationale, de l{\textquoteright}Enseignement Sup{\'e}rieur et de la Recherche.",

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T1 - Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

AU - Usami, Noritaka

AU - Kutsukake, Kentaro

AU - Nakajima, Kazuo

AU - Amtablian, Sevak

AU - Fave, Alain

AU - Lemiti, Mustapha

N1 - Funding Information: This work was supported by the Japan-France integrated action program, “SAKURA,” from the Japan Society for the Promotion of Science (JSPS), the Ministère des Affaires Etrangères in France (MAE), and the Ministère de l’Education Nationale, de l’Enseignement Supérieur et de la Recherche.

PY - 2007

Y1 - 2007

N2 - Single crystalline Si with buried porous layers was utilized as a substrate for the epitaxy of 100-nm -thick Si0.73 Ge0.27. Raman spectroscopy revealed that the strain status in SiGe systematically changes according to the variation in the porosity of the substrate and that the strain relaxation in SiGe was found to proceed with increasing porosity. Furthermore, Si was found to be tensilely strained to reduce the compressive strain in SiGe. These results suggest that the appropriate design of the porosity and the thickness of the thin Si layer on the buried porous layer offers an alternative way to control strain status in SiGe.

AB - Single crystalline Si with buried porous layers was utilized as a substrate for the epitaxy of 100-nm -thick Si0.73 Ge0.27. Raman spectroscopy revealed that the strain status in SiGe systematically changes according to the variation in the porosity of the substrate and that the strain relaxation in SiGe was found to proceed with increasing porosity. Furthermore, Si was found to be tensilely strained to reduce the compressive strain in SiGe. These results suggest that the appropriate design of the porosity and the thickness of the thin Si layer on the buried porous layer offers an alternative way to control strain status in SiGe.

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Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

Abstract

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