We report the control of the orbital occupation by using the intra-orbital Coulomb interaction in quantum dots T-coupled to quantum wires. With the change of the confinement potential, intra-orbital Coulomb interaction exceeds orbital level spacing and influences the orbital occupation. We realize such potential modification by changing either the gate design or the voltages applied to the gates. The rearrangement of the orbital occupation is confirmed from the response of the addition energy spectroscopy to the magnetic field.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008 Dec 1|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics