Control of point defects and grain boundaries in advanced materials: Optical properties and diffusion induced by Li doping in ZnO

Tsubasa Nakagawa, Isao Sakaguchi, Katsuyuki Matsunaga, Takahisa Yamamoto, Hajime Haneda, Yuichi Ikuhara

    Research output: Contribution to journalConference articlepeer-review

    17 Citations (Scopus)

    Abstract

    Nickel diffusion in non-doped and Li-doped polycrystalline ZnO was studied to investigate the dominant lattice defect introduced by the reaction of incorporated Li. Li-doped ZnO exhibited new emission at 393 nm. Li doping increased the Ni lattice diffusion coefficients in ZnO, but its effect on Ni grain boundary diffusion was very small. These results can be understood as Li incorporation in the ZnO lattice.

    Original languageEnglish
    Pages (from-to)343-347
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume232
    Issue number1-4
    DOIs
    Publication statusPublished - 2005 May 1
    EventInelastic Ion-Surface Collisions Proceedings of the 15th International Workshop on Inelastic Ion-Surface Collisons -
    Duration: 2004 Oct 172004 Oct 22

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

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