Control of oxidation and reduction reactions at HfSiOSi interfaces through N exposure or incorporation

H. Kamada, T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO (N) Si gate stack structures annealed in a N2 or O2 atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films in the annealing process at proper partial pressure of N2 gas (P N2 ∼100 Torr). The detailed analysis of " Si O2 equivalent thicknesses" for annealed HfSiO and HfSiON films reveals that ambient N2 gas suppresses only the reduction reaction, while nitrogen atoms incorporated in dielectrics suppress both oxidation and reduction reactions.

Original languageEnglish
Article number212903
JournalApplied Physics Letters
Volume93
Issue number21
DOIs
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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