Control of nitrogen depth profile near silicon oxynitride/Si(100) interface formed by radical nitridation

Kazumasa Kawase, Tomoyuki Suwa, Masaaki Higuchi, Hiroshi Umeda, Masao Inoue, Shimpei Tsujikawa, Akinobu Teramoto, Takeo Hattori, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Depth profiles of composition and chemical structures in radical nitrided silicon oxynitride films formed with Ar/N2, Xe/N2, or Ar/NH3 plasma excited by microwave have been investigated by X-ray photoelectron spectroscopy combined with step etching in HF solution. The relationship between the intensities of emission from N2+ radical in these plasmas and the concentration of nitrogen atoms forming Si 3≡N configuration near the silicon oxynitride film/Si substrate interface nitrided using these plasmas was studied. The emission intensities from N2+ radical generated in Xe/N 2 or Ar/NH3 plasma are a quarter or one-sixth of that from N2+ radical generated in Ar/N2 plasma respectively. However, the emission from NH radical is also detected in Ar/NH3 plasma. Although the nitrogen concentration of Xe/N 2 plasma is smaller than that of Ar/N2 plasma at the film/substrate interface, that of Ar/NH3 plasma is larger than that of Ar/N2 plasma at the interface. It is important for the reduction of the nitrogen concentration near the film/substrate interface to use Xe/N 2 plasma in which both of the generation efficiencies of N 2+ and NH radicals are low.

Original languageEnglish
Pages (from-to)6203-6209
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number8 A
DOIs
Publication statusPublished - 2006 Aug 4

Keywords

  • Depth profile
  • Emission
  • Microwave
  • Nitridation
  • Oxide
  • Oxynitride
  • Plasma
  • Radical
  • Silicon
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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