Depth profiles of composition and chemical structures in radical nitrided silicon oxynitride films formed with Ar/N2, Xe/N2, or Ar/NH3 plasma excited by microwave have been investigated by X-ray photoelectron spectroscopy combined with step etching in HF solution. The relationship between the intensities of emission from N2+ radical in these plasmas and the concentration of nitrogen atoms forming Si 3≡N configuration near the silicon oxynitride film/Si substrate interface nitrided using these plasmas was studied. The emission intensities from N2+ radical generated in Xe/N 2 or Ar/NH3 plasma are a quarter or one-sixth of that from N2+ radical generated in Ar/N2 plasma respectively. However, the emission from NH radical is also detected in Ar/NH3 plasma. Although the nitrogen concentration of Xe/N 2 plasma is smaller than that of Ar/N2 plasma at the film/substrate interface, that of Ar/NH3 plasma is larger than that of Ar/N2 plasma at the interface. It is important for the reduction of the nitrogen concentration near the film/substrate interface to use Xe/N 2 plasma in which both of the generation efficiencies of N 2+ and NH radicals are low.
|Number of pages||7|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||8 A|
|Publication status||Published - 2006 Aug 4|
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ASJC Scopus subject areas
- Physics and Astronomy(all)