Control of nitrogen depth profile in ultrathin oxynitride films formed by pulse-time-modulated nitrogen beams

Seiji Samukawa, Youichi Minemura, Seiichi Fukuda

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

The control of nitrogen depth profile in ultrathin Si oxynitride films using a pulse-time-modulated N2 neutral beam was studied. The neutral beam source consisted of an inductively coupled plasma (ICP) source and parallel top and bottom carbon plates. It was found that the nitrogen depth profile in the film could be controlled by changing the pulse-on time and source power in the pulsed nitrogen beams. The role of substrate temperature in determining nitrogen concentration profile was also discussed.

Original languageEnglish
Pages (from-to)245-249
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number2
DOIs
Publication statusPublished - 2004 Mar

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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