The control of nitrogen depth profile in ultrathin Si oxynitride films using a pulse-time-modulated N2 neutral beam was studied. The neutral beam source consisted of an inductively coupled plasma (ICP) source and parallel top and bottom carbon plates. It was found that the nitrogen depth profile in the film could be controlled by changing the pulse-on time and source power in the pulsed nitrogen beams. The role of substrate temperature in determining nitrogen concentration profile was also discussed.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2004 Mar|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films