A new scheme of magnetization reversal, an electrically assisted magnetization reversal, is realized in a carrier-induced ferromagnetic semiconductor (In, Mn)As structure. The demonstration has been done with field-effect transistors (FETs) having a thin (In, Mn)As channel by the application of a gate electric field to control the hole concentration p.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials