Control of magnetization reversal in ferromagnetic semiconductors by electrical means

Daichi Chiba, Michihiko Yamanouchi, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A new scheme of magnetization reversal, an electrically assisted magnetization reversal, is realized in a carrier-induced ferromagnetic semiconductor (In, Mn)As structure. The demonstration has been done with field-effect transistors (FETs) having a thin (In, Mn)As channel by the application of a gate electric field to control the hole concentration p.

Original languageEnglish
JournalJournal of Physics Condensed Matter
Volume16
Issue number48
DOIs
Publication statusPublished - 2004 Dec 8

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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