TY - JOUR
T1 - Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates
AU - Usami, N.
AU - Arai, J.
AU - Kim, E. S.
AU - Ota, K.
AU - Hattori, T.
AU - Shiraki, Y.
N1 - Funding Information:
The authors would like to acknowledge K. Momma for his expert support in electron beam lithography and fruitful discussions, A. Ohga, K. Amano, and S. Ohtake for their technical support. This work was in part supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture. N.U. acknowledges support from the Foundation of Advanced Technology Institute, and K.O. acknowledges support from Japan Science Promotion Society Fellowships for Japanese Junior Scientists.
PY - 1998/7/15
Y1 - 1998/7/15
N2 - Two approaches to control the position and the size of semiconductor islands are proposed. The first method is to perform overgrowth on a cleaved edge of strained multiple quantum wells which acts as a substrate with a periodically modulated lattice constant, thus inducing a periodic strain to the overgrown layer. The second method is to selectively grow islands in specific windows defined by electron beam lithography. Both the methods are applied to the Ge/Si system and the controllability of the Ge island formation is demonstrated.
AB - Two approaches to control the position and the size of semiconductor islands are proposed. The first method is to perform overgrowth on a cleaved edge of strained multiple quantum wells which acts as a substrate with a periodically modulated lattice constant, thus inducing a periodic strain to the overgrown layer. The second method is to selectively grow islands in specific windows defined by electron beam lithography. Both the methods are applied to the Ge/Si system and the controllability of the Ge island formation is demonstrated.
KW - Cleaved edge overgrowth
KW - Selective epitaxial growth
KW - Semiconductor islands
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U2 - 10.1016/S1386-9477(98)00030-7
DO - 10.1016/S1386-9477(98)00030-7
M3 - Article
AN - SCOPUS:0347569892
VL - 2
SP - 137
EP - 141
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-4
ER -