Abstract
Two approaches to control the position and the size of semiconductor islands are proposed. The first method is to perform overgrowth on a cleaved edge of strained multiple quantum wells which acts as a substrate with a periodically modulated lattice constant, thus inducing a periodic strain to the overgrown layer. The second method is to selectively grow islands in specific windows defined by electron beam lithography. Both the methods are applied to the Ge/Si system and the controllability of the Ge island formation is demonstrated.
Original language | English |
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Pages (from-to) | 137-141 |
Number of pages | 5 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 2 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1998 Jul 15 |
Keywords
- Cleaved edge overgrowth
- Selective epitaxial growth
- Semiconductor islands
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics