Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates

N. Usami, J. Arai, E. S. Kim, K. Ota, T. Hattori, Y. Shiraki

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    Two approaches to control the position and the size of semiconductor islands are proposed. The first method is to perform overgrowth on a cleaved edge of strained multiple quantum wells which acts as a substrate with a periodically modulated lattice constant, thus inducing a periodic strain to the overgrown layer. The second method is to selectively grow islands in specific windows defined by electron beam lithography. Both the methods are applied to the Ge/Si system and the controllability of the Ge island formation is demonstrated.

    Original languageEnglish
    Pages (from-to)137-141
    Number of pages5
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume2
    Issue number1-4
    DOIs
    Publication statusPublished - 1998 Jul 15

    Keywords

    • Cleaved edge overgrowth
    • Selective epitaxial growth
    • Semiconductor islands

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics

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