TY - JOUR
T1 - Control of injected carriers in tetracyano-p-quinodimethane encapsulated carbon nanotube transistors
AU - Shiraishi, Masashi
AU - Nakamura, Shuichi
AU - Fukao, Tomohiro
AU - Takenobu, Taishi
AU - Kataura, Hiromichi
AU - Iwasa, Yoshihiro
N1 - Funding Information:
The authors (M.S., S.N., and T.F.) wish to thank Professor Y. Suzuki and Dr. M. Mizuguchi for their fruitful discussions. The part of this work was carried out with the financial aid of New Energy and Industrial Technology Development Organization (NEDO).
PY - 2005/8/29
Y1 - 2005/8/29
N2 - We examined transistor characteristics of tetracyano-p-quinodimethane encapsulated single-walled carbon nanotubes (TCNQ@SWNTs). In device operations, a clear conversion to a p -type character was observed and the stability of carriers, previously doped into SWNTs, were simultaneously clarified. Because of an energy band shift, between the electrodes and the doped SWNTs induced by the doping, electron injection was achieved only by application of a high source-drain voltage, while holes were easily injected because of decrease in hole barrier height.
AB - We examined transistor characteristics of tetracyano-p-quinodimethane encapsulated single-walled carbon nanotubes (TCNQ@SWNTs). In device operations, a clear conversion to a p -type character was observed and the stability of carriers, previously doped into SWNTs, were simultaneously clarified. Because of an energy band shift, between the electrodes and the doped SWNTs induced by the doping, electron injection was achieved only by application of a high source-drain voltage, while holes were easily injected because of decrease in hole barrier height.
UR - http://www.scopus.com/inward/record.url?scp=24644436539&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=24644436539&partnerID=8YFLogxK
U2 - 10.1063/1.2035331
DO - 10.1063/1.2035331
M3 - Article
AN - SCOPUS:24644436539
VL - 87
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
M1 - 093107
ER -