Abstract
We demonstrate that maskless wet etching of self-assembled Ge quantum dot (QD) multilayers can create large-area photonic nanostructures, and the geometry can be tuned by changing wet etching conditions. It is found that the reflectance in the near-infrared wavelength can be decreased by controlling geometry, and an increase in the depth of the photonic nanostructures results in enhancement of photoluminescence intensity from Ge QDs. These results show that control of geometry in photonic nanostructures is useful for enhancement of optical absorption in the Ge QD multilayers.
Original language | English |
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Pages (from-to) | 338-341 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 557 |
DOIs | |
Publication status | Published - 2014 Apr 30 |
Keywords
- Ge
- Nanostructure
- Self-assembly
- Si
- Solar cell
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry