Control of flat band voltage by partial incorporation of La 2O3 or Sc2O3 into HfO2 in metal/HfO2/SiO2/Si MOS capacitors

M. Adachi, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science