Control of flat band voltage by partial incorporation of La 2O3 or Sc2O3 into HfO2 in metal/HfO2/SiO2/Si MOS capacitors

M. Adachi, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained in the HfO2 layer. Flat-band voltage (VFB) shifts were measured by changing composition in metal/HfO2/(HfO2) 1-x(La2O3)x/SiO2/Si and metal/HfO2/(HfO2)1-x. (Sc2O 3)x/SiO2/Si structures. It was found that VFB shift arises mainly from high-k/SiO2 interface rather than metal/high-k interface. VFB could be effectively controlled by incorporating La2O3 or Sc2O3 near the high-k/SiO2 interface.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages157-167
Number of pages11
Edition4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 82007 Oct 10

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • Engineering(all)

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    Adachi, M., Okamoto, K., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2007). Control of flat band voltage by partial incorporation of La 2O3 or Sc2O3 into HfO2 in metal/HfO2/SiO2/Si MOS capacitors. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 157-167). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779557