Control of ferromagnetism in field-effect transistor of a magnetic semiconductor

F. Matsukura, D. Chiba, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, H. Ohno

Research output: Contribution to journalConference article

32 Citations (Scopus)

Abstract

The structure of a field effect transistor (FET) was used for isothermal and reversible electric-field control of the ferromagnetism of (In,Mn)As magnetic semiconductors. The ferromagnetic transition temperature was controlled isothermally and reversibly by varying the gate electric field. The field-controlled ferromagnetism was expected to be used in the integration of ferromagnetic devices with nonmagnetic devices such as lasers and transistors in use in electronics.

Original languageEnglish
Pages (from-to)351-355
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
Publication statusPublished - 2002 Jan 1
Event14th International Conference on the - Prague, Czech Republic
Duration: 2001 Jul 302001 Aug 3

Keywords

  • (In, Mn)As
  • Ferromagnetism
  • Field-effect transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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