Control of epitaxial orientation of TiN thin films grown by N-implantation

Y. Kasukabe; A. Ito; S. Nagata; M. Kishimoto; Y. Fujino; S. Yamaguchi; Y. Yamada

doi:10.1016/S0169-4332(98)00132-9

Control of epitaxial orientation of TiN thin films grown by N-implantation

Y. Kasukabe, A. Ito, S. Nagata, M. Kishimoto, Y. Fujino, S. Yamaguchi, Y. Yamada

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Nitrogen ions (N₂⁺) with 62 keV have been implanted into 100-nm thick films prepared by evaporation of Ti on thermally cleaned NaCl substrates held at room temperature (RT) and 250 °C. Unimplanted and N-implanted Ti films have been examined mainly by transmission electron microscopy. The evaporated films grown at RT consisted of (03·5)- and (2̄1·0)-oriented hcp-Ti, and (110)-oriented CaF₂-type TiH_x. The N-implantation into the (03·5)-oriented hcp-Ti and (110)-oriented TiH_x, results in the epitaxial growth of the (001)- and (110)-oriented TiN_y, respectively, whereas nitriding of the (2̄1·0)-oriented hcp-Ti gives rise to the growth of (110)-oriented TiN_y rotated by approximately 9° with respect to that grown from the (110)-oriented TiH_x. On the other hand, the Ti films grown at 250 °C consisted of only the (03·5)-oriented hcp-Ti. It has been clearly shown that only the (001)-oriented TiN_y film is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The control of epitaxial orientation of the TiN_y films grown by N-implantation and nitriding mechanism of epitaxial Ti thin films are discussed.

Original language	English
Pages (from-to)	643-650
Number of pages	8
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00132-9
Publication status	Published - 1998
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Control of epitaxial orientation of TiN thin films grown by N-implantation",

abstract = "Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm thick films prepared by evaporation of Ti on thermally cleaned NaCl substrates held at room temperature (RT) and 250 °C. Unimplanted and N-implanted Ti films have been examined mainly by transmission electron microscopy. The evaporated films grown at RT consisted of (03·5)- and ({\=2}1·0)-oriented hcp-Ti, and (110)-oriented CaF2-type TiHx. The N-implantation into the (03·5)-oriented hcp-Ti and (110)-oriented TiHx, results in the epitaxial growth of the (001)- and (110)-oriented TiNy, respectively, whereas nitriding of the ({\=2}1·0)-oriented hcp-Ti gives rise to the growth of (110)-oriented TiNy rotated by approximately 9° with respect to that grown from the (110)-oriented TiHx. On the other hand, the Ti films grown at 250 °C consisted of only the (03·5)-oriented hcp-Ti. It has been clearly shown that only the (001)-oriented TiNy film is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The control of epitaxial orientation of the TiNy films grown by N-implantation and nitriding mechanism of epitaxial Ti thin films are discussed.",

author = "Y. Kasukabe and A. Ito and S. Nagata and M. Kishimoto and Y. Fujino and S. Yamaguchi and Y. Yamada",

year = "1998",

doi = "10.1016/S0169-4332(98)00132-9",

language = "English",

volume = "130-132",

pages = "643--650",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

note = "Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

}

TY - JOUR

T1 - Control of epitaxial orientation of TiN thin films grown by N-implantation

AU - Kasukabe, Y.

AU - Ito, A.

AU - Nagata, S.

AU - Kishimoto, M.

AU - Fujino, Y.

AU - Yamaguchi, S.

AU - Yamada, Y.

PY - 1998

Y1 - 1998

N2 - Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm thick films prepared by evaporation of Ti on thermally cleaned NaCl substrates held at room temperature (RT) and 250 °C. Unimplanted and N-implanted Ti films have been examined mainly by transmission electron microscopy. The evaporated films grown at RT consisted of (03·5)- and (2̄1·0)-oriented hcp-Ti, and (110)-oriented CaF2-type TiHx. The N-implantation into the (03·5)-oriented hcp-Ti and (110)-oriented TiHx, results in the epitaxial growth of the (001)- and (110)-oriented TiNy, respectively, whereas nitriding of the (2̄1·0)-oriented hcp-Ti gives rise to the growth of (110)-oriented TiNy rotated by approximately 9° with respect to that grown from the (110)-oriented TiHx. On the other hand, the Ti films grown at 250 °C consisted of only the (03·5)-oriented hcp-Ti. It has been clearly shown that only the (001)-oriented TiNy film is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The control of epitaxial orientation of the TiNy films grown by N-implantation and nitriding mechanism of epitaxial Ti thin films are discussed.

AB - Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm thick films prepared by evaporation of Ti on thermally cleaned NaCl substrates held at room temperature (RT) and 250 °C. Unimplanted and N-implanted Ti films have been examined mainly by transmission electron microscopy. The evaporated films grown at RT consisted of (03·5)- and (2̄1·0)-oriented hcp-Ti, and (110)-oriented CaF2-type TiHx. The N-implantation into the (03·5)-oriented hcp-Ti and (110)-oriented TiHx, results in the epitaxial growth of the (001)- and (110)-oriented TiNy, respectively, whereas nitriding of the (2̄1·0)-oriented hcp-Ti gives rise to the growth of (110)-oriented TiNy rotated by approximately 9° with respect to that grown from the (110)-oriented TiHx. On the other hand, the Ti films grown at 250 °C consisted of only the (03·5)-oriented hcp-Ti. It has been clearly shown that only the (001)-oriented TiNy film is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The control of epitaxial orientation of the TiNy films grown by N-implantation and nitriding mechanism of epitaxial Ti thin films are discussed.

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DO - 10.1016/S0169-4332(98)00132-9

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AN - SCOPUS:0032094716

VL - 130-132

SP - 643

EP - 650

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

Y2 - 27 October 1997 through 30 October 1997

ER -

Control of epitaxial orientation of TiN thin films grown by N-implantation

Abstract

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