Abstract
Nitrogen ions (N2+) with 62 keV have been implanted into 100-nm thick films prepared by evaporation of Ti on thermally cleaned NaCl substrates held at room temperature (RT) and 250 °C. Unimplanted and N-implanted Ti films have been examined mainly by transmission electron microscopy. The evaporated films grown at RT consisted of (03·5)- and (2̄1·0)-oriented hcp-Ti, and (110)-oriented CaF2-type TiHx. The N-implantation into the (03·5)-oriented hcp-Ti and (110)-oriented TiHx, results in the epitaxial growth of the (001)- and (110)-oriented TiNy, respectively, whereas nitriding of the (2̄1·0)-oriented hcp-Ti gives rise to the growth of (110)-oriented TiNy rotated by approximately 9° with respect to that grown from the (110)-oriented TiHx. On the other hand, the Ti films grown at 250 °C consisted of only the (03·5)-oriented hcp-Ti. It has been clearly shown that only the (001)-oriented TiNy film is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The control of epitaxial orientation of the TiNy films grown by N-implantation and nitriding mechanism of epitaxial Ti thin films are discussed.
Original language | English |
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Pages (from-to) | 643-650 |
Number of pages | 8 |
Journal | Applied Surface Science |
Volume | 130-132 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |
Event | Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films