Control of electron transport in two-dimensional array of Si nanodisks for spiking neuron device

We fabricated a device with a two-dimensional Si-nanodisk array (2D ND array) with spiking neurons. The 2D ND array was prepared using a 2D array of iron-oxide cores as a uniform mask and a defect-free chlorine neutral beam as an etcher. The transformation from a pulse input signal (voltage) to a decayed analog output (current) was clearly observed, which may have resulted from the random hopping of electrons in the 2D ND array. Additionally, these analog outputs could be integrated in this 2D array by applying consecutive pulse inputs.