We investigate the effect of the parasitic access resistance on device parameters, particularly the threshold voltage (VT) and the contact resistance (RC), of staggered organic field-effect transistors by varying the active layer thickness (ds). At low gate voltages, R C decreases as ds increases due to the free carrier density increasing in the semiconductor film. At high gate voltages, R C increases as ds increases due to increasing access resistance. These factors degrade the device parameters with increasing d s. The contribution of the change in ds on the V T shift is assessed by subtracting the contact effect from the apparent VT.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)