Control of device parameters by active layer thickness in organic field-effect transistors

Masataka Kano, Takeo Minari, Kazuhito Tsukagoshi, Hiroki Maeda

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We investigate the effect of the parasitic access resistance on device parameters, particularly the threshold voltage (VT) and the contact resistance (RC), of staggered organic field-effect transistors by varying the active layer thickness (ds). At low gate voltages, R C decreases as ds increases due to the free carrier density increasing in the semiconductor film. At high gate voltages, R C increases as ds increases due to increasing access resistance. These factors degrade the device parameters with increasing d s. The contribution of the change in ds on the V T shift is assessed by subtracting the contact effect from the apparent VT.

Original languageEnglish
Article number073307
JournalApplied Physics Letters
Volume98
Issue number7
DOIs
Publication statusPublished - 2011 Feb 14
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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