@inproceedings{42f48a0635ed4dc8afd9067c217e9797,
title = "Control of crystalline microstructures in metal gate electrodes for nano CMOS devices",
abstract = "We propose a novel approach to control the effective work function by taking advantage of crystal structures in metal gate electrodes. The crystal structures determine the predominant material elements at the metal/high-k interface. We have found that, in a Ru-Mo alloy system, a randomly-oriented Ru (fcc) structure promotes the segregation of Mo at the interface, enabling us to achieve a wide controllability of flatband voltage by the amount of 0.6-0.8 eV. In addition, the segregation of Mo within a Ru-rich electrode is a key to reducing Fermi level pinning at the metal/HfSiON interfaces.",
author = "K. Ohmori and T. Chikyow and T. Hosoi and H. Watanabe and K. Nakajima and T. Adachi and A. Ishikawa and Y. Sugita and Y. Nara and Y. Ohji and K. Shiraishi and K. Yamabe",
year = "2008",
month = nov,
day = "17",
doi = "10.1149/1.2908633",
language = "English",
isbn = "9781566776271",
series = "ECS Transactions",
number = "2",
pages = "201--207",
booktitle = "ECS Transactions - Dielectrics for Nanosystems 3",
edition = "2",
note = "3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting ; Conference date: 18-05-2008 Through 22-05-2008",
}