Control of composition and deposition rate in Si-Ge CVD epitaxy on Si

Manabu Kato, Junichi Murota, Shoichi Ono

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11 Citations (Scopus)


Epitaxial growth of Si-Ge on Si deposition has been investigated by ultraclean low-pressure CVD using SiH4 and GeH4 gases. It was found that, with GeH4 addition, the deposition rate on Si increases, and the deposition rate strongly depends on the Si substrate orientation. From the relationship between the deposition conditions and the Ge concentration, it has been found that the SiH4 and GeH4 reaction rates were expressed by an equation similar to the Langmuir isotherm. Then, it is proposed that the SiH4 reaction rate constant at Ge bond sites is larger than those of Si, while the SiH4 and GeH4 adsorption rate constants are largest at hollow bridge sites, which are composed of opposite bonds from Si and Ge. Moreover, an expression was derived relating the Ge content in the film to the GeH4 and SiH4 partial pressures.

Original languageEnglish
Pages (from-to)117-121
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1991 Dec 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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