TY - GEN
T1 - Control of both number and position of dopant atoms in semiconductors by single ion implantation
AU - Shinada, Takahiro
AU - Kurosawa, Tomonori
AU - Kobayashi, Takahiro
AU - Nakayama, Hideki
AU - Ohdomari, Iwao
PY - 2006/1/1
Y1 - 2006/1/1
N2 - Continued challenge for higher-performance semiconductor device requires the controlled doping of single-dopant atom to control the electrical properties1-10. Here we report the fabrication of semiconductors with both dopant number and position controlled by using a one-by-one doping technique, which we call "single-ion implantation (SII)" 11-19. This technique enables us to implant dopant ions one-by-one into a fine semiconductor region until the necessary number is reached. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping. We also find that the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopant atoms. The ordered dopant arrays may increase the prospects of fluctuation-controlled advanced silicon transistors.
AB - Continued challenge for higher-performance semiconductor device requires the controlled doping of single-dopant atom to control the electrical properties1-10. Here we report the fabrication of semiconductors with both dopant number and position controlled by using a one-by-one doping technique, which we call "single-ion implantation (SII)" 11-19. This technique enables us to implant dopant ions one-by-one into a fine semiconductor region until the necessary number is reached. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping. We also find that the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopant atoms. The ordered dopant arrays may increase the prospects of fluctuation-controlled advanced silicon transistors.
UR - http://www.scopus.com/inward/record.url?scp=34250175126&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34250175126&partnerID=8YFLogxK
U2 - 10.1109/iwjt.2006.220851
DO - 10.1109/iwjt.2006.220851
M3 - Conference contribution
AN - SCOPUS:34250175126
SN - 1424400473
SN - 9781424400478
T3 - Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
SP - 16
EP - 20
BT - Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
PB - IEEE Computer Society
T2 - Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
Y2 - 15 May 2006 through 16 May 2006
ER -