Control of both number and position of dopant atoms in semiconductors by single ion implantation

Takahiro Shinada; Tomonori Kurosawa; Takahiro Kobayashi; Hideki Nakayama; Iwao Ohdomari

doi:10.1109/iwjt.2006.220851

Control of both number and position of dopant atoms in semiconductors by single ion implantation

Takahiro Shinada, Tomonori Kurosawa, Takahiro Kobayashi, Hideki Nakayama, Iwao Ohdomari

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Continued challenge for higher-performance semiconductor device requires the controlled doping of single-dopant atom to control the electrical properties^1-10. Here we report the fabrication of semiconductors with both dopant number and position controlled by using a one-by-one doping technique, which we call "single-ion implantation (SII)" ^11-19. This technique enables us to implant dopant ions one-by-one into a fine semiconductor region until the necessary number is reached. Electrical measurements reveal that the threshold voltage (V_th) fluctuation for the ordered dopant arrays is less than for conventional random doping. We also find that the device with ordered dopant array exhibits two times the lower average value (-0.4V) of V_th shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopant atoms. The ordered dopant arrays may increase the prospects of fluctuation-controlled advanced silicon transistors.

Original language	English
Title of host publication	Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
Publisher	IEEE Computer Society
Pages	16-20
Number of pages	5
ISBN (Print)	1424400473, 9781424400478
DOIs	https://doi.org/10.1109/iwjt.2006.220851
Publication status	Published - 2006 Jan 1
Externally published	Yes
Event	Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China Duration: 2006 May 15 → 2006 May 16

Publication series

Name	Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Other

Other	Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
Country	China
City	Shanghai
Period	06/5/15 → 06/5/16

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Surfaces and Interfaces

Access to Document

10.1109/iwjt.2006.220851

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Shinada, T., Kurosawa, T., Kobayashi, T., Nakayama, H., & Ohdomari, I. (2006). Control of both number and position of dopant atoms in semiconductors by single ion implantation. In Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06 (pp. 16-20). [1669438] (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06). IEEE Computer Society. https://doi.org/10.1109/iwjt.2006.220851

Control of both number and position of dopant atoms in semiconductors by single ion implantation. / Shinada, Takahiro; Kurosawa, Tomonori; Kobayashi, Takahiro; Nakayama, Hideki; Ohdomari, Iwao.

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. IEEE Computer Society, 2006. p. 16-20 1669438 (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shinada, T, Kurosawa, T, Kobayashi, T, Nakayama, H & Ohdomari, I 2006, Control of both number and position of dopant atoms in semiconductors by single ion implantation. in Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06., 1669438, Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06, IEEE Computer Society, pp. 16-20, Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06, Shanghai, China, 06/5/15. https://doi.org/10.1109/iwjt.2006.220851

Shinada T, Kurosawa T, Kobayashi T, Nakayama H, Ohdomari I. Control of both number and position of dopant atoms in semiconductors by single ion implantation. In Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. IEEE Computer Society. 2006. p. 16-20. 1669438. (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06). https://doi.org/10.1109/iwjt.2006.220851

Shinada, Takahiro ; Kurosawa, Tomonori ; Kobayashi, Takahiro ; Nakayama, Hideki ; Ohdomari, Iwao. / Control of both number and position of dopant atoms in semiconductors by single ion implantation. Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. IEEE Computer Society, 2006. pp. 16-20 (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06).

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