Control of both number and position of dopant atoms in semiconductors by single ion implantation

Takahiro Shinada, Tomonori Kurosawa, Takahiro Kobayashi, Hideki Nakayama, Iwao Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Continued challenge for higher-performance semiconductor device requires the controlled doping of single-dopant atom to control the electrical properties1-10. Here we report the fabrication of semiconductors with both dopant number and position controlled by using a one-by-one doping technique, which we call "single-ion implantation (SII)" 11-19. This technique enables us to implant dopant ions one-by-one into a fine semiconductor region until the necessary number is reached. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping. We also find that the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopant atoms. The ordered dopant arrays may increase the prospects of fluctuation-controlled advanced silicon transistors.

Original languageEnglish
Title of host publicationExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
PublisherIEEE Computer Society
Pages16-20
Number of pages5
ISBN (Print)1424400473, 9781424400478
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes
EventExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
Duration: 2006 May 152006 May 16

Publication series

NameExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Other

OtherExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
Country/TerritoryChina
CityShanghai
Period06/5/1506/5/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

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