Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

Takao Shimizu, Tatsuhiko Yokouchi, Takahiro Oikawa, Takahisa Shiraishi, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Alexei Gruverman, Hiroshi Funakubo

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49 Citations (Scopus)


The ferroelectric properties of the (Hf0.5Zr0.5)O2 films on Pt/Ti/SiO2/Si substrate are investigated. It is found that the films crystallized by annealing in O2 and N2 atmospheres have similar crystal structures as well as remanent polarization and coercive fields. Weak temperature and frequency dependences of the ferroelectric properties indicate that the hysteretic behavior in HfO2-based films originates not from the mobile defects but rather from the lattice ionic displacement, as is the case of the typical ferroelectric materials.

Original languageEnglish
Article number112904
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2015 Mar 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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