We have studied contribution of ionic precursors to deposition rate of a-Si:H films in the downstream region of a multi-hollow discharge plasma CVD reactor using a DC bias grid and QCMs. The deposition rate decreases from 1.1 to 0.93 by applying negative bias voltage to the bias grid. The ionic precursors contribute to 7% of the total deposition rate and the dominant ionic precursors are considered to be negatively charged clusters.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2014|
|Event||26th Symposium on Plasma Sciences for Materials, SPSM 2013 - Fukuoka, Japan|
Duration: 2013 Sep 23 → 2013 Sep 24
ASJC Scopus subject areas
- Physics and Astronomy(all)