Room temperature continuous-wave (CW) operation of a ZnSe-based blue-green laser diode, homo-epitaxially grown on semiinsulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T0) was 140K between 253 and 318K.
- Semiconductor growth
- Semiconductor junction lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering