Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

A. Ohki, T. Ohno, T. Matsuoka, Y. Ichimura

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Room temperature continuous-wave (CW) operation of a ZnSe-based blue-green laser diode, homo-epitaxially grown on semiinsulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T0) was 140K between 253 and 318K.

Original languageEnglish
Pages (from-to)990-991
Number of pages2
JournalElectronics Letters
Volume33
Issue number11
DOIs
Publication statusPublished - 1997 May 22
Externally publishedYes

Keywords

  • Diodes
  • Semiconductor growth
  • Semiconductor junction lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates'. Together they form a unique fingerprint.

Cite this