In this study, induced current potential drop (ICPD) technique was applied to monitor SCC crack growth. The SCC crack monitored was introduced on the internal wall of a pipe specimen in which simulated BWR water flows. The measurement was performed on the external wall of the pipe specimen. It was shown that the ICPD technique permits continuous monitoring of the SCC growth, which initiates from the inner wall of the pipe specimen under elevated temperature.
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Condensed Matter Physics