Continuous hydrothermal synthesis of nickel oxide nanoplates and their use as nanoinks for p-type channel material in a bottom-gate field-effect transistor

Seiichi Takami, Ryoma Hayakawa, Yutaka Wakayama, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

Nickel oxide nanoplates were continuously synthesized by hydrothermal reaction using a flow-type reactor. The products had a thickness of ∼ 10nm and a lateral size of 100-500nm. The nanoplates were purified and drop-cast on a bottom-gate substrate and used as the channel material in a field-effect transistor after annealing at 300 °C. The Id-Vd profile showed that the NiO nanoplates worked as the p-type semiconductor. This result suggests that various electronic devices can be prepared using metal oxide nanomaterials, which exhibit various properties including magnetism, ferroelectronics and catalysis as well as stability and safety in air and water.

Original languageEnglish
Article number134009
JournalNanotechnology
Volume21
Issue number13
DOIs
Publication statusPublished - 2010 Mar 19

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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