Contactless measurement of electrical conductivity of Si wafers independent of wafer thickness

Yang Ju, Yo Hirosawa, Hitoshi Soyama, Masumi Saka

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A method for contactless measurement of electrical conductivity of Si wafers independent of wafer thickness is presented. The effective region within which this proposed technique can be used is discussed in detail, and an equation to determine the boundary of the effective region is introduced. Three groups of Si wafers with different thicknesses were used as samples. A compact microwave instrument working at 94 GHz was used to measure the samples without contact. The reflection coefficient of the microwave signal was obtained and used to determine the electrical conductivity of the wafers. The electrical conductivities of the wafers thus measured were in good agreement with values obtained using a conventional four-point-probe method. This indicates that the proposed technique is a powerful tool for contactless measurement of electrical conductivity of Si as well as other semiconductor wafers independent of wafer thickness.

Original languageEnglish
Article number162102
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number16
DOIs
Publication statusPublished - 2005 Oct 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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