Contactless measurement of conductivity of silicon wafers by millimeter waves

Y. Ju, Y. Hirosawa, Hitoshi Soyama, Masumi Saka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The measurement of electrical conductivity of silicon wafers was described using a millimeter wave compact equipment. The principle of the technique is based on the interaction of the millimeter waves with silicon wafers. The continuous millimeter wave signal having a fixed frequency of 94 GHz was applied to the silicon wafer through a horn antenna. After interacting with the wafer, the reflected signal was received by the same antennas. The results show that the proposed technique is a powerful tool for the measurement of the silicon wafers in a contactless fashion and independent of the thickness.

Original languageEnglish
Title of host publicationFifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves - Symposium Proceedings, MSMW'04
EditorsA. Kostenko, A.I. Nosich, V.F. Yakovenko
Pages424-426
Number of pages3
Volume1
Publication statusPublished - 2004 Dec 1
EventFifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves - Symposium Proceedings, MSMW'04 - Kharkov, Ukraine
Duration: 2004 Jun 212004 Jun 26

Other

OtherFifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves - Symposium Proceedings, MSMW'04
CountryUkraine
CityKharkov
Period04/6/2104/6/26

ASJC Scopus subject areas

  • Engineering(all)

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