Abstract
The measurement of electrical conductivity of silicon wafers was described using a millimeter wave compact equipment. The principle of the technique is based on the interaction of the millimeter waves with silicon wafers. The continuous millimeter wave signal having a fixed frequency of 94 GHz was applied to the silicon wafer through a horn antenna. After interacting with the wafer, the reflected signal was received by the same antennas. The results show that the proposed technique is a powerful tool for the measurement of the silicon wafers in a contactless fashion and independent of the thickness.
| Original language | English |
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| Title of host publication | Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves - Symposium Proceedings, MSMW'04 |
| Editors | A. Kostenko, A.I. Nosich, V.F. Yakovenko |
| Pages | 424-426 |
| Number of pages | 3 |
| Volume | 1 |
| Publication status | Published - 2004 Dec 1 |
| Event | Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves - Symposium Proceedings, MSMW'04 - Kharkov, Ukraine Duration: 2004 Jun 21 → 2004 Jun 26 |
Other
| Other | Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves - Symposium Proceedings, MSMW'04 |
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| Country/Territory | Ukraine |
| City | Kharkov |
| Period | 04/6/21 → 04/6/26 |
ASJC Scopus subject areas
- Engineering(all)