Contact thickness effects in bottom-contact coplanar organic field-effect transistors

Yong Xu, William Scheideler, Chuan Liu, Francis Balestra, Gerard Ghibaudo, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Influences of contact thickness on bottom-contact and bottom-gate coplanar organic transistors are studied. In transistors with poor-quality pentacene films, thick contacts improve mobility and lower contact resistance. However, in transistors with high-quality pentacene films, thick contacts significantly degrade performance by disrupting molecular self-organization at the contact edge. These results highlight the importance of contact thickness to such organic transistors and reveal that semiconductor morphology should be considered in designing devices with minimal contact effects.

Original languageEnglish
Article number6471743
Pages (from-to)535-537
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number4
DOIs
Publication statusPublished - 2013 Mar 11
Externally publishedYes

Keywords

  • Contact resistance
  • contact thickness
  • mobility
  • organic field-effect transistors (OFETs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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