Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory

S. Shindo; Y. Sutou; J. Koike; Y. Saito; Y. H. Song

doi:10.1016/j.mssp.2016.02.006

Contact resistivity of amorphous and crystalline GeCu₂Te₃ to W electrode for phase change random access memory

S. Shindo, Y. Sutou, J. Koike, Y. Saito, Y. H. Song

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We have investigated the contact resistivity of GeCu₂Te₃ (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity ρ_c of as-deposited amorphous GCT to W was 3.9×10^-2 Ω cm². The value of ρ_c drastically decreased upon crystallization and crystalline GCT that annealed at 300 °C showed a ρ_c of 4.8×10^-6 Ω cm². The ρ_c contrast between amorphous (as-deposited) and crystalline (annealed at 300 °C) states was larger in GCT than in conventional Ge₂Sb₂Te₅ (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	47
DOIs	https://doi.org/10.1016/j.mssp.2016.02.006
Publication status	Published - 2016 Jun 1

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory",

abstract = "We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity ρc of as-deposited amorphous GCT to W was 3.9×10-2 Ω cm2. The value of ρc drastically decreased upon crystallization and crystalline GCT that annealed at 300 °C showed a ρc of 4.8×10-6 Ω cm2. The ρc contrast between amorphous (as-deposited) and crystalline (annealed at 300 °C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell.",

author = "S. Shindo and Y. Sutou and J. Koike and Y. Saito and Song, {Y. H.}",

note = "Funding Information: The authors thank Dr. P. Fons of AIST, Japan, for help in the preparation of the manuscript. This work was supported by KAKENHI (Grant no. 15H04113 ) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, CT and Future Planning ( NRF-2015R1A2A2A01007289 ). ",

year = "2016",

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doi = "10.1016/j.mssp.2016.02.006",

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AU - Shindo, S.

AU - Sutou, Y.

AU - Koike, J.

AU - Saito, Y.

AU - Song, Y. H.

N1 - Funding Information: The authors thank Dr. P. Fons of AIST, Japan, for help in the preparation of the manuscript. This work was supported by KAKENHI (Grant no. 15H04113 ) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, CT and Future Planning ( NRF-2015R1A2A2A01007289 ).

PY - 2016/6/1

Y1 - 2016/6/1

N2 - We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity ρc of as-deposited amorphous GCT to W was 3.9×10-2 Ω cm2. The value of ρc drastically decreased upon crystallization and crystalline GCT that annealed at 300 °C showed a ρc of 4.8×10-6 Ω cm2. The ρc contrast between amorphous (as-deposited) and crystalline (annealed at 300 °C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell.

AB - We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity ρc of as-deposited amorphous GCT to W was 3.9×10-2 Ω cm2. The value of ρc drastically decreased upon crystallization and crystalline GCT that annealed at 300 °C showed a ρc of 4.8×10-6 Ω cm2. The ρc contrast between amorphous (as-deposited) and crystalline (annealed at 300 °C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell.

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