Abstract
We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity ρc of as-deposited amorphous GCT to W was 3.9×10-2 Ω cm2. The value of ρc drastically decreased upon crystallization and crystalline GCT that annealed at 300 °C showed a ρc of 4.8×10-6 Ω cm2. The ρc contrast between amorphous (as-deposited) and crystalline (annealed at 300 °C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell.
Original language | English |
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Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Materials Science in Semiconductor Processing |
Volume | 47 |
DOIs | |
Publication status | Published - 2016 Jun 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering