Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory

S. Shindo, Y. Sutou, J. Koike, Y. Saito, Y. H. Song

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19 Citations (Scopus)


We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity ρc of as-deposited amorphous GCT to W was 3.9×10-2 Ω cm2. The value of ρc drastically decreased upon crystallization and crystalline GCT that annealed at 300 °C showed a ρc of 4.8×10-6 Ω cm2. The ρc contrast between amorphous (as-deposited) and crystalline (annealed at 300 °C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 2016 Jun 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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