Contact resistivity between tungsten and impurity (P and B)-doped Si 1-x-y Ge x C y epitaxial layer

Jintae Noh, Masao Sakuraba, Junichi Murota, Shigeaki Zaima, Yukio Yasuda

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20 Citations (Scopus)

Abstract

Contact resistivity between tungsten and in situ impurity (P and B)-doped Si 1-x-y Ge x C y films with 0 ≤ x ≤ 0.7, 0 ≤ y ≤ 0.02 has been investigated. In the case of the P-doped Si 1-x-y Ge x C y films, the contact resistivity decreases with increasing the carrier concentration, independently of the Ge and C fraction. Because P atoms become electrically inactive with increasing the Ge and C fractions, lower Ge and C fractions are necessary to reduce the contact resistivity. By growing the multi-layer P-doped epitaxial Si with a high carrier concentration of 4 × 10 20 cm -3 at a very low temperature of 450 °C on the P-doped Si 1-x-y Ge x C y film, very low contact resistivity of 6.5 × 10 -8 Ω cm 2 is achieved. On the other hand, in the case of the B-doped Si 1-x-y Ge x C y films, the contact resistivity decreases with increasing the Ge fraction and scarcely depends on C fraction at a specified carrier concentration, and is typically 25 and 57% lower for x = 0.44 and 0.7 than that for Si, respectively. For the B-doped Si 0.56 Ge 0.44 films with a high carrier concentration of 6 × 10 20 cm -3 , very low contact resistivity is obtained to be 3.8 × 10 -8 Ω cm 2 . These results demonstrate that low contact resistivity is caused by the lowering of schottky barrier height between metal and the B-doped film, due to the valence band shift.

Original languageEnglish
Pages (from-to)679-683
Number of pages5
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
Publication statusPublished - 2003 May 15
Externally publishedYes

Keywords

  • CVD
  • Contact resistivity
  • Impurity doping
  • Si Ge C
  • Tungsten

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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